Integrated structure with transistors and schottky diodes and process for fabricating the same

ABSTRACT

A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

This is a divisional application of U.S. patent application Ser. No.11/853,694, filed on Sep. 11, 2007, which is incorporated herein asthough set forth in full.

BACKGROUND

1. Field

The present disclosure relates generally to transistors, diodes andfabrication processes for transistors and diodes. More particularly, itrelates to an integrated structure comprising transistors, either highelectron mobility or double-heterostructure field effect, and Schottkydiodes and a process for fabricating the same.

2. Description of the Related Art

Gallium-Nitride (GaN) microwave monolithic integrated circuit (MMIC)high-electron-mobility-transistor (HEMT) technology has the advantagesof high breakdown voltage, high operation temperature, high operationspeed and a potentially high degree of integration. Such technology canbe used for high-voltage, high-temperature, or high-radiationapplications, including automotive, aviation and aerospace systems.Applications requiring high breakdown voltages, such as DC-to-DCswitching power supplies, can be implemented with the GaN integratedcircuit process.

However, the gate/source Schottky diode (one of the key components usedin digital, analog or mixed-mode circuit) in the existing GaN HEMTprocess suffers from excessive parasitic capacitance and resistance dueto its lateral junction structure, and non-ideal semiconductor layerstructure. This parasitic capacitance and resistance leads to loweroperation speed, lower gain, higher power consumption, and largerphysical size. The non-ideal larger structure also leads to large andvariable non-ideality factors in the Schottky diode I-V characteristics.Schottky diodes are semiconductor diodes with a low forward voltage dropand a very fast switching action. They are well known to the personskilled in the art and will not be described here in detail.

FIG. 1 shows a mesa structure obtained in accordance with a prior artGaN MMIC HEMT process. The structure comprises a plurality of HEMTs 20separated by isolation elements 30. The HEMTs 20 share a substrate 1,for example a semi-insulating SiC substrate.

Each HEMT 20 comprises an undoped (i.e. unintentionally doped)semiconductor layer 2, e.g. a GaN buffer layer having a bandgap that isless than the band gap of semiconductor layer 5 later described. Withinthe undoped layer 2 there is generated a two-dimensional electron gas 3in the structure, which forms the HEMT transistor channel. An undoped‘spacer’ semiconductor layer 4 is disposed on top of the undoped layer 2to further enhance the carrier mobility in the two-dimensional electrongas 3. The spacer layer 4 can be made of Al_(0.25)Ga_(0.75)N. The Almole fraction of any Al_(X)Ga_(1-X)N layer could typically be in therange of 0.15 to 0.40.

The embodiment shown in FIG. 1 may also comprise a donor semiconductorlayer 5 having a band gap and be optionally doped with a charge carrier(e.g., an N-type dopant in the form of silicon). Usually the donor layer5 is made of Al_(0.25)Ga_(0.75)N.

An undoped spacer layer is deposited on top of the donor layer 5. It canbe made of Al_(0.25)Ga_(0.75)N. If the donor layer 5 is undoped, thentwo spacer layers 4, 6 and the donor layer 5 can be formed as onecontiguous spacer layer 4, 5, 6.

A source ohmic contact 7 and drain ohmic contact 8 are formed on top ofthe structure. The first cap layers 9, 10 are placed as to avoid directcontact between the ohmic contacts 7, 8 and the spacer layer 6. Thefirst cap layers 9, 10 can be made of N+ doped GaN. (N+ doping istypically considered to be in the range of 1E17 to 1E19 cm⁻³; doping inthe range of 0 to 1E18 cm⁻³ is typically considered N−.) The structurealso comprises second cap layers 11, 12, which can be made of N+ dopedAl_(0.25)Ga_(0.75)N.

An e-beam resist 13 is formed on the structure, and a metallic gate 14is evaporated into a gate pattern formed by the resist 13. The voltageon gate 14 controls the two-dimensional electron gas 3.

A Schottky diode can be formed in the structure shown in FIG. 1. Inparticular, the drain and source terminals 7, 8 are shorted together asthe cathode of the diode. The gate terminal 14 forms the anode of thediode. When operating as a Schottky diode, formation of the diode occursby way of the junction between gate 14 and channel layer 6 and thecurrents flow laterally in layer 6 from the diode junction to thecathode.

While the undoped layer 6 provides for high carrier mobility underneaththe gate 14, the low carrier concentration leads to a high seriesresistance between the gate 14 and the cathode contact 7, 8, resultingin increased loss in switching and level shifting applications. Withthis conventional gate Schottky structure, reductions in this resistancecan only be achieved with wider devices, a one-for-one trade-off betweenthe resistance and parasitic capacitance that ultimately limits theswitching speed of the diode.

An added problem resulting from the high resistivity of the channellayer 6 is that of a “current crowding” when the gate Schottky isforward-biased. A lateral I•R voltage drop along the channel results inthe middle of the gate Schottky diode being less forward-biased than theedges, so that there is more current conduction along the edges of thediode than in the middle. Thus, beyond a certain point, increasing thechannel length to increase the diode area will not appreciably affectthe current-handling capability of the diode. Once again, the onlyalternative is to increase the device width, leading to a trade-offbetween parasitic capacitance and current handling capability—a secondkey limitation of the conventional gate Schottky diode.

Therefore, the Schottky diode (one of the key components used indigital, analog, or mixed-mode circuits) in the existing GaN MMIC HEMTprocess suffers from excessive parasitic capacitance and resistance dueto its lateral junction structure. This parasitic capacitance andresistance lead to lower operation speed, lower gain, higher powerconsumption, and larger physical size.

Another prior art structure is shown in Gerard T. Dang at al, “HighVoltage GaN Schottky Rectifiers”, IEEE Trans. On Electron Devices, Vol.47, No. 4, April 2000. The Schottky diode process described by Dang atal. does not integrate GaN HEMT transistors on the same wafer.

The GaN MMIC HEMT process was designed for microwave and millimeter-waveamplifier applications. Integration levels for microwave amplifiers arenot very high (e.g., 2 to 4 HEMT transistors). As the integrationcomplexity of GaN HEMT integrated circuits becomes higher, theperformance of Schottky diodes (as voltage shifters and rectifiers)becomes more important. There is a need for high performance Schottkydiodes to make GaN HEMTs more competitive.

SUMMARY

A process for fabricating an integrated group III nitride structurecomprising high electron mobility transistors (HEMTs) and Schottkydiodes, and the resulting structure, are disclosed. Integration ofvertical junction Schottky diodes is enabled, and the parasiticcapacitance and resistance as well as the physical size of the diode areminimized. A process for fabricating an integrated group III nitridestructure comprising double-heterostructure field effect transistors(DHFETs) and Schottky diodes and the resulting structure are alsodisclosed.

In particular, the present disclosure shows a new mesa structure whichcan be integrated with existing GaN MMIC HEMT or DHFET processes. Thenew mesa structure enables the integration of vertical junction Schottkydiodes, thus minimizing the parasitic capacitance and resistance as wellas the physical size of the diode. Assuming same current handlingcapacity, the GaN Schottky diode according to the present disclosure has75% less parasitic resistance and 80% less parasitic capacitance whencompared to the current lateral GaN Schottky diode. The diode accordingto the present disclosure may lead to a 20 times improvement in the RCtime constant.

According to a first aspect of the present disclosure, a process forfabricating an integrated group III nitride structure of transistors(e.g. HEMTs or DHFETs) and Schottky diodes is provided, the processcomprising: providing semiconductor layers, comprising: providing agroup III nitride compound first intermediate layer; providing a groupIII nitride compound second intermediate layer above the firstintermediate layer; providing a group III nitride compound etch stoplayer above the second intermediate layer; providing a group III nitridecompound third intermediate layer above the etch stop layer; providing agroup III nitride compound fourth intermediate layer above the thirdintermediate layer; fabricating at least one transistor, comprisingremoving portions of said semiconductor layers; and fabricating at leastone Schottky diode, comprising removing portions of said semiconductorlayers.

The first aspect of the present disclosure may further comprise:providing a group III nitride compound first spacer semiconductor layerbelow the first intermediate layer and providing a group III nitridecompound buffer semiconductor layer below the first spacer semiconductorlayer; wherein said fabricating at least one transistor is fabricatingat least one high electron mobility transistor (HEMT).

The first aspect of the present disclosure may further comprise infabricating at least one HEMT: removing the fourth intermediate layer,third intermediate layer and etch stop layer; providing source and draincontacts on the second intermediate layer; and providing a gate contacton the first spacer semiconductor layer.

The first aspect of the present disclosure may further comprise:providing a group III nitride compound barrier layer below the firstintermediate layer; providing a group III nitride compound channel layerbelow the barrier layer; providing a group III nitride compound bufferlayer below the channel layer; and providing a group III nitridecompound nucleation semiconductor layer below the buffer layer; whereinsaid fabricating at least one transistor is fabricating at least onedouble-heterostructure field effect transistor (DHFET).

The first aspect of the present disclosure may further comprise infabricating at least one DHFET: removing the fourth intermediate layer,third intermediate layer and etch stop layer; providing source and draincontacts on the second intermediate layer; and providing a gate contacton the barrier layer.

According to a second aspect of the present disclosure, an integratedgroup III nitride structure comprising transistors (e.g. HEMTs orDHFETs) and Schottky diodes is provided, wherein the structurecomprises: at least one transistor and at least one Schottky diode,wherein the at least one transistor comprises: a group III nitridecompound first intermediate layer and a group III nitride compoundsecond intermediate layer above the first intermediate layer, andwherein the at least one Schottky diode comprises: the group III nitridecompound first intermediate layer, the group III nitride compound secondintermediate layer, a group III nitride compound etch stop layer abovethe second intermediate layer; a group III nitride compound thirdintermediate layer above the etch stop layer; and a group III nitridecompound fourth intermediate layer above the third intermediate layer.

The second aspect of the present disclosure may further comprise a groupIII nitride compound first spacer semiconductor layer below the firstintermediate layer and a group III nitride compound buffer semiconductorlayer below the first spacer semiconductor layer; wherein said at leastone transistor is at least one high electron mobility transistor (HEMT).

The second aspect of the present disclosure may further comprise in atleast one HEMT: a source contact on the second intermediate layer; adrain contact on the second intermediate layer; and providing a gatecontact on the first spacer semiconductor layer.

The second aspect of the present disclosure may further comprise: agroup III nitride compound barrier layer below the first intermediatelayer; a group III nitride compound channel layer below the barrierlayer; a group III nitride compound buffer layer below the channellayer; and a group III nitride compound nucleation semiconductor layerbelow the buffer layer; wherein said at least one transistor is at leastone double-heterostructure field effect transistor (DHFET).

The second aspect of the present disclosure may further comprise in atleast one DHFET: a source contact on the second intermediate layer; adrain contact on the second intermediate layer; and providing a gatecontact on the barrier layer.

The steps recited in the process claims can also be performed in asequence which is different from the sequence recited in the claims. Alldifferent sequences of steps are intended to be covered by the languageof the appended claims.

The present disclosure will be best understood from the followingdescription when read in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1, already described in detail, is a cross sectional view of aprior art integrated HEMT/Schottky diode structure.

FIG. 2 is a cross sectional view of an integrated HEMT/Schottky diodestructure in accordance with an embodiment of the present disclosure anda process for obtaining the same.

FIG. 3 is a cross sectional view of an integrated Schottky diodestructure deposited on a DHFET structure in accordance with a furtherembodiment of the present disclosure and a process for obtaining thesame.

FIG. 4 is a table of examples of ranges of layer thicknesses for theHEMT/Schottky diode structure.

DETAILED DESCRIPTION

FIG. 2 shows an improved process and an improved integrated Schottkystructure in accordance with the present disclosure.

The HEMT depositing is performed as per the prior art, depositing afirst intermediate layer 11, 12, 48 of N+ doped AlGaN and a secondintermediate layer 9, 10, 42 of N+ GaN. An AlN etch stop layer 41 isformed above the N+ doped GaN “cap” layer 42 from which cap layers 9, 10of the HEMT shown in FIG. 1 and on the left side of FIG. 2 are formed. Athird intermediate layer, or second N+ doped GaN layer, 43 is formed ontop of the AlN etch stop layer 41 to form the back side (cathode)contact to the diode. The fourth intermediate layer, an N− doped GaNlayer 44 is formed in the gate region. Cathode metals 45, 46 are put ontop of the second N+ doped GaN layer 43, while anode metal 47 is putabove the N− doped GaN layer 44. The thickness and doping level of theN− doped GaN layer 44 are controllable and can be optimized for diodeperformance.

In areas where the Schottky diodes are not being formed, selectiveetching between GaN layer 42 and AlN layer 41 may be used to remove thethree top layers 41, 43, 44 to expose the original HEMT device layerstack. Gate and ohmic metallization steps can then be performed tosimultaneously form the contacts to the HEMT transistors and Schottkydiodes.

FIG. 3 shows an improved process and an improved integrated Schottkystructure deposited on a DHFET structure. A possible DHFET structure isdescribed in U.S. Pat. No. 7,098,490, incorporated by reference in thepresent application, and comprises a substrate 61 (for example, SiC), anAlGaN nucleation layer 62, an Al_(X)Ga_(1-X)N buffer layer 63, a N+doped GaN channel layer 64, and a barrier layer 65. The nucleation layer62 provides a crystallographic transition between the substrate 61 andthe buffer layer 63, which may have different crystal structures. Thechannel layer 64 should have little effect on the Schottky diode otherthan perhaps reducing the series resistance.

FIG. 4 is a table of example thickness ranges for an HFET/Schottkyembodiment. The thicknesses of the etch stop and intermediate layerscould also be applied to a DHFET/Schottky embodiment.

While several illustrative embodiments of the invention have been shownand described, numerous variations and alternative embodiments willoccur to those skilled in the art. Such variations and alternativeembodiments are contemplated, and can be made without departing from thespirit and scope of the invention as defined in the appended claims.

1. An integrated group III nitride structure of transistors and Schottkydiodes comprising: at least one transistor and at least one Schottkydiode, wherein the at least one transistor comprises: a group IIInitride compound first intermediate layer and a group III nitridecompound second intermediate layer above the first intermediate layer,and wherein the at least one Schottky diode comprises: the group IIInitride compound first intermediate layer, the group III nitridecompound second intermediate layer, a group III nitride compound etchstop layer above the second intermediate layer; a N+ doped group IIInitride compound third intermediate layer above the etch stop layer; anda N− doped group III nitride compound fourth intermediate layer abovethe third intermediate layer.
 2. The structure of claim 1, wherein: thefirst intermediate layer comprises aluminum gallium nitride (AlGaN) andthe second intermediate layer comprises gallium nitride (GaN).
 3. Thestructure of claim 2, wherein: the first intermediate layer comprises N+doped AlGaN and the second intermediate layer comprises N+ doped GaN. 4.The structure of claim 1, wherein: the etch stop layer comprisesaluminum nitride (AlN); the third intermediate layer comprises galliumnitride (GaN); and the fourth intermediate layer comprises galliumnitride (GaN).
 5. The structure of claim 4, wherein: the thirdintermediate layer comprises N+ doped GaN and the fourth intermediatelayer comprises N− doped GaN.
 6. The structure of claim 1, wherein theSchottky diodes further comprise: cathode metal contacts on the thirdintermediate layer and an anode metal contact on the fourth intermediatelayer, wherein a thickness and a doping level of the fourth intermediatelayer are configured for diode performance.
 7. The structure of claim 1,further comprising: a group III nitride compound first spacersemiconductor layer below the first intermediate layer and a group IIInitride compound buffer semiconductor layer below the first spacersemiconductor layer; wherein said at least one transistor IS at leastone high electron mobility transistor (HEMT).
 8. The structure of claim7, further comprising: a group III nitride compound doped donorsemiconductor layer above the first spacer semiconductor layer and asecond group III nitride compound second spacer semiconductor layerabove the donor semiconductor layer and below the first intermediatelayer.
 9. The structure of claim 8, wherein: the buffer semiconductorlayer comprises gallium nitride (GaN); the first and second spacersemiconductor layers comprise aluminum gallium nitride (AlGaN); and thedonor layer comprises aluminum gallium nitride (AlGaN).
 10. Thestructure of claim 7, wherein at least one high electron mobilitytransistor (HEMT) further comprises: a source contact on the secondintermediate layer; a drain contact on the second intermediate layer;and a gate contact on the first spacer semiconductor layer.
 11. Thestructure of claim 1, further comprising: a group III nitride compoundbarrier layer below the first intermediate layer; a group III nitridecompound channel layer below the barrier layer; a group III nitridecompound buffer layer below the channel layer; and a group III nitridecompound nucleation semiconductor layer below the buffer layer; whereinsaid at least one transistor is at least one double-heterostructurefield effect transistor (DHFET).
 12. The structure of claim 11, whereinat least one double-heterostructure field effect transistor (DHFET)further comprises: a source contact on the second intermediate layer; adrain contact on the second intermediate layer; and a gate contact onthe barrier layer.
 13. The structure of claim 1, wherein: a thickness ofthe first intermediate layer is 50-500 angstroms; a thickness of thesecond intermediate layer is 50-500 angstroms; a thickness of the etchstop is 100-200 angstroms; a thickness of the third intermediate layeris 100-1000 angstroms; and a thickness of the fourth intermediate layeris 100-1000 angstroms.